Spin/valley coupled dynamics of electrons and holes at the MoS₂–MoSe₂ interface
A. Kumar, D. Yagodkin, N. Stetzuhn, S. Kovalchuk, A. Melnikov, P. Elliott, S. Sharma, C. Gahl, and K. I. Bolotin – 2021
The coupled spin and valley degrees of freedom in transition metal dichalcogenides (TMDs) are considered a promising platform for information processing. Here, we use a TMD heterostructure MoS₂–MoSe₂ to study optical pumping of spin/valley polarized carriers across the interface and to elucidate the mechanisms governing their subsequent relaxation. By applying time-resolved Kerr and reflectivity spectroscopies, we find that the photoexcited carriers conserve their spin for both tunneling directions across the interface. Following this, we measure dramatically different spin/valley depolarization rates for electrons and holes, ∼30 and <1 ns⁻¹, respectively, and show that this difference relates to the disparity in the spin–orbit splitting in conduction and valence bands of TMDs. Our work provides insights into the spin/valley dynamics of photoexcited carriers unaffected by complex excitonic processes and establishes TMD heterostructures as generators of spin currents in spin/valleytronic devices.